Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications Manuscript Received: 8 September 2022, Accepted: 12 October 2022, Published: 15 March 2023, ORCiD: 0000-0003-4631-6695, https://doi.org/10.33093/jetap.2023.5.1.1

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Published: Mar 15, 2023
DOI: https://doi.org/10.33093/jetap.2023.5.1.1
Keywords:
Gunn diode, d-doped, Indium Phosphide, Monte Carlo mode, Terahertz source

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Siti Amiera Mohd Akhbar
Faculty of Engineering, Multimedia University
Kan Yeep Choo
Faculty of Engineering, Multimedia University
Duu Sheng Ong
Faculty of Engineering, Multimedia University

Abstract

In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure. The d-doped effect caused an increment in the fundamental operating frequency and current harmonic amplitude in InP Gunn diodes by modifying the electric field profile within the device. An InP notch-d-doped Gunn diode with device length of 800 nm under 3V DC bias is capable of producing AC current signal of 287 GHz, reaching the THz region, with its harmonic amplitude being 5.68×108 A/m2. It is observed that InP-based notch-d-doped Gunn diode is able to generate signals at a higher operating frequency with a larger output power as compared to that of GaAs due to the higher electron drift velocity and threshold field in InP material. 

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Vol. 5 No. 1 (2023): https://doi.org/10.33093/jetap.2023.5.1
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